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。关于这个话题，爱思助手下载最新版本提供了深入分析
一场在全国范围全面有序开展的交叉执行改革就此展开。
Modern NAND might use ~100-400 electrons per level difference with 7 level differences. These exact charge levels are not public, this is best guess. For a conservative max-charge estimate per cell (full ‘000’ state in TLC), let’s use ~1,000 electrons.
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