Екатерина Щербакова (ночной линейный редактор)
Storing Data: To write data, a high voltage (around 15-20V) is applied to the control gate above the floating gate. This causes electrons from the transistor’s channel (the substrate) to “tunnel” through the thin oxide barrier via a quantum mechanical process called Fowler-Nordheim tunneling. The electrons get trapped in the floating gate, creating a negative charge. The presence and amount of this charge shift the cell’s threshold voltage—the voltage needed to turn the transistor on during a read operation.
，更多细节参见纸飞机下载
Москалькова заявила о новых условиях Киева для возвращения россиян с территории Украины14:51，更多细节参见91视频
:first-child]:h-full [&:first-child]:w-full [&:first-child]:mb-0 [&:first-child]:rounded-[inherit] h-full w-full。17c 一起草官网对此有专业解读
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