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Storing Data: To write data, a high voltage (around 15-20V) is applied to the control gate above the floating gate. This causes electrons from the transistor’s channel (the substrate) to “tunnel” through the thin oxide barrier via a quantum mechanical process called Fowler-Nordheim tunneling. The electrons get trapped in the floating gate, creating a negative charge. The presence and amount of this charge shift the cell’s threshold voltage—the voltage needed to turn the transistor on during a read operation.
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06:02, 5 марта 2026МирЭксклюзив
“一群人在这样的一个时代，一棒接一棒，把一地的渣子重新收拾起来，拿簸箕扫，然后一块一块就像拼乐高似的，给它重新拼起来。”董哲对南方周末记者说。
不过，今年的 iPhone 17e 新增了一个全新的粉色，加上之前的黑白，现一共提供三种配色。